| PART |
Description |
Maker |
| S29GL016A10FAIR10 S29GL016A30FAIR10 S29GL032A10FAI |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
http://
|
| AT52BR3228A AT52BR3224A AT52BR3228AT-70CI AT52BR32 |
32-megabit Flash 4-megabit/ 8-megabit SRAM Stack Memory 32兆位闪存4兆位/ 8兆位的SRAM堆栈内存
|
Atmel Corp.
Atmel, Corp.
|
| S25FL001D0FNAI013 S25FL001D0FNFI001 S25FL001D0FNFI |
2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
|
SPANSION[SPANSION]
|
| AT49LW080 AT49LW040 AT49LW040-33JC AT49LW040-33TC |
8-megabit and 4-megabit Firmware Hub Flash Memory
|
Atmel Corp.
|
| S29GL064N90DFI040 S29GL064N90BFI033 S29GL032N90TFI |
4M X 16 FLASH 3V PROM, 90 ns, PBGA64 9 X 9 MM, LEAD FREE, FBGA-64
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
|
Spansion, Inc.
SPANSION LLC
|
| AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM
SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位）的CMOS存储
Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32
MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| AM29LV160 AM29LV160BB70RSEB AM29LV160BB70REEB AM29 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
6800uF 100WV 20% *NO Pb*
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PBGA48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PDSO48
VARISTOR METAL-OXIDE 150V RAD.3 10MM-DIA BULK 2M X 8 FLASH 3V PROM, 70 ns, PDSO44
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
http://
|
| EN71NS032A0 EN71NS032A0-9DCWP EN71NS032A0-7DCWP |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous Operation, Multiplexed Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
| AM27C1024 AM27C1024-120DC5 AM27C1024-120DC5B AM27C |
Quad 2-input exclusive-NOR gates with open collector outputs 14-SOIC 0 to 70
Quad 2-input exclusive-NOR gates with open collector outputs 14-PDIP 0 to 70
1 Megabit (65 K x 16-Bit) CMOS EPROM 1兆位5亩16位）的CMOS存储
1 Megabit (65 K x 16-Bit) CMOS EPROM 64K X 16 UVPROM, 55 ns, CDIP40
Quadruple 2-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SO 0 to 70 1兆位5亩16位）的CMOS存储
1 Megabit (65 K x 16-Bit) CMOS EPROM 1兆位65亩16位）的CMOS存储
64K X 16 UVPROM, 70 ns, CDIP40
1 megabit CMOS EPROM
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
| AT49SV802A-90TI AT49SV802A-90CU |
8-megabit 1.8-volt Only Flash Memory 8兆位1.8伏，只有闪存
8-megabit 1.8-volt Only Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
|
Atmel, Corp.
ATMEL Corporation
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
